A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs
نویسندگان
چکیده
A new resistance model for lightly doped source/drain regions featuring a nonlinear gate voltage dependence has been implemented in the Bsim3v3 model. This is achieved by separating the LDS(D) resistance into a voltage dependent accumulation and a spreading part.
منابع مشابه
A New Physical Modeling of Parasitic Capacitances of Deep-Submicron LDD MOSFETs
In mixed circuit simulation, the estimation of parasitic capacitances of deep-submicron MOSFETs is very important. With the continuous scaling of the devices, the extrinsic capacitance, i.e. the overlap and fringing capacitances become a growing fraction of the total gate capacitance. We found the major existing models do not predict correctly the overlap capacitance and the inner fringing capa...
متن کاملScaling Effects on Thermal and Gate Induced Noise of Small Geometry LDD Mosfets
An analytical model is developed to study the impact of scaling on the thermal and gate induced noise of the small geometry LDD MOSFETs. The analyses includes the short channel, narrow width, velocity saturation, hot carrier and LDD effects. The intricacy in analysis when considering all these effects simultaneously as in the small geometry devices is overcomed and a generalized expression vali...
متن کاملAn analytical source-and-drain series resistance model of quarter micron MOSFETs and its influence on circuit simulation
An analytical model to describe the bias dependent series resistances and of LDD MOSFETs down to quarter micron and below is introduced. Comparing measurement and simulation results of CMOS ring oscillators it has been found that for low voltage applications ( V) an incorrect description of and can cause a simulation error of up to 30 % in the delay time of CMOS inverters.
متن کاملA Simple General-purpose I-V Model for All Operating Modes of Deep Submicron MOSFETs
A simple general-purpose I-V model for all operating modes of deep-submicron MOSFETs is presented. Considering the most dominant short channel effects with simple equations including few extra parameters, a reasonable trade-off between simplicity and accuracy is established. To further improve the accuracy, model parameters are optimized over various channel widths and full range of operating v...
متن کاملModeling and extraction of gate bias-dependent parasitic source and drain resistances in MOSFETs
Gate voltage-dependent parasitic source and drain resistances in MOSFETs have been modeled and extracted with a symmetric additional resistance method (sARM) for better description of asymmetric parasitic resistances which are induced by intentional and/or accidental variations in the layout and fabrication process. A good agreement of nonlinear models with the sARM has been verified with exper...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1998